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N-polar n+ GaN cap development for low ohmic contact resistance to inverted HEMTs

✍ Scribed by D. J. Meyer; D. S. Katzer; R. Bass; N. Y. Garces; M. G. Ancona; D. A. Deen; D. F. Storm; S. C. Binari

No coin nor oath required. For personal study only.

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