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N doping in the liquid phase epitaxial growth of GaP:N light emitting diodes

✍ Scribed by J. Pfeifer; L. Csontos; M. Gál

Book ID: 112998692
Publisher: Springer-Verlag
Year: 1979
Weight: 534 KB
Volume: 47
Category: Article
ISSN: 0001-6705
DOI: 10.1007/bf03156509

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## Abstract We have investigated how in (AlGaIn)N quantum well (QW) light emitting diodes, grown by low‐pressure metal‐organic vapor phase epitaxy, the actual Mg doping profile close to the interface between AlGaN electron barrier and QW active region, known to be affected by both segregation of ba