We have implanted Sn, Ge, and Si into Nb films. The resulting Nb-Sn compounds and their annealing behavior have been analyzed by the M6ssbauer effect and compared to samples obtained by diffusion of Sn into Nb foils. M6ssbauer spectra show that Nb3Sn is obtained lust by implantation, but with a Tc o
Mössbauer studies of O4+-bombarded Nb3Sn
✍ Scribed by J. C. Glass; F. Pobell; J. M. Söder; J. Bolz
- Publisher
- Springer US
- Year
- 1979
- Tongue
- English
- Weight
- 501 KB
- Volume
- 36
- Category
- Article
- ISSN
- 0022-2291
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✦ Synopsis
M6ssbauer spectra have been taken for Nb3Sn films on Hastelloy substrate bombarded with 25-MeV 0 4~ ions at fluences of 9.6;<10 ~s and 4.0;< 1016cm -2, and annealed a.t temperatures up to 1050 ~ The bombarded samples are found to contain highly damaged Nb3Sn and Nbe-Sn5, and show superconducting transitions at 7.3 and 3.3K, respectively. Annealing at higher temperatures does not restore the properties of the samples to those known for undamaged Nb~Sn films. The results rather indicate the presence of Nb3Sn and also Nb6Sns even after annealing at 850 ~ Annealing at 1050 ~ seems to produce only regions of heavily damaged Nb3Sn.
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