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Muons for spintronics: Photo-induced conduction electron polarization in n-type GaAs observed by the muonium method

✍ Scribed by K. Yokoyama; K. Nagamine; K. Shimomura; H.W.K. Tom; R. Kawakami; P. Bakule; Y. Matsuda; F.L. Pratt; E. Torikai


Book ID
104081080
Publisher
Elsevier Science
Year
2009
Tongue
English
Weight
398 KB
Volume
404
Category
Article
ISSN
0921-4526

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✦ Synopsis


The spin-dependent exchange scattering between the muonium (Mu) electron and polarized conduction electrons excited by circularly polarized 831 nm laser light was observed in n-type GaAs with 3.6 Â 10 16 cm À3 Si doping at low temperature by measuring a change in the polarization of Mu against the conduction electron polarization (CEP) direction. Correct signal response was confirmed with respect to the laser power. These results are encouraging for the Mu technique to be applied to probe CEP in various spintronics material systems.