Multivalley effect on electronic states in Si quantum dots
✍ Scribed by Yoko Hada; Mikio Eto
- Publisher
- Elsevier Science
- Year
- 2003
- Tongue
- English
- Weight
- 84 KB
- Volume
- 17
- Category
- Article
- ISSN
- 1386-9477
No coin nor oath required. For personal study only.
✦ Synopsis
Electronic states in Si quantum dots are theoretically examined, considering a multivalley structure of conduction band. In quantum dots smaller than about 5 nm, one-electron energy levels in equivalent valleys are ÿlled consecutively with increasing the number of electrons N . Owing to the absence of intervalley spin-couplings, high-spin states are realized more often in small magnetic ÿelds, than in GaAs quantum dots. In much larger dots, electrons are accommodated in a valley, making the highest spin of S = N=2, to gain the exchange energy.
📜 SIMILAR VOLUMES
Using a six-band k Á p formalism we investigated the single-particle hole states in the double quantum dots made of two identical, vertically stacked, Ge/Si nanoclusters. The elastic strain due to the lattice mismatch between Ge and Si was included into the problem via Bir-Pikus Hamiltonian. As cons
Electron energy levels in single dots, and energy splitting and tunneling times in stacked quantum dots are calculated as functions of structure parameters. An effective mass approach is used to solve the Schrödinger equation for cylindrical dots with finite confinement potentials. Strong confinemen