Multipurpose cryostat for low temperature electron irradiation of semi-conductors
✍ Scribed by E. Gmelin; R. Saffert; H. Schönteich
- Publisher
- Elsevier Science
- Year
- 1978
- Tongue
- English
- Weight
- 594 KB
- Volume
- 18
- Category
- Article
- ISSN
- 0011-2275
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✦ Synopsis
A multipurpose cryostat is described which is designed for low temperature 1 MeVelectron irradiation and isochronal and isothermal recovery experiments in the temperature range from 2-350 K. It is suitable for simultaneous measurement of electrical resistivity, magnetoresistance, Hall effect, Seebeck effect, Nernst-Ettingshausen effect and spectroscopic investigation.
Multipurpose cryostat for low temperature electron irradiation of semi-conductors E. Gmelin, R. Saffert and H. Schonteich Low-temperature electron irradiation is a technique for studying lattice defects in semiconductors which has become of growing importance during the last years. Many sophisticated experimental methods have been developed in order to understand formation and recovery of point defects and their interaction with other types of defects (eg dislocations) in metals and semiconductors. Usually these experiments have been performed at low temperatures in special cryostats, different types of which have been described in the literature. ~-7 Due to the uncertainties in the theory of point defects, difficulties in the interpretation of the experimental results still remain. The interpretation of radiation damage experiments is often restricted to special problems. Comprehensive discussion necessitates the knowledge of very different physical parameters, determined on samples with the same impurity content, reproducable preparation and irradiation conditions. This unsatisfactory situation may be overcome by doing a more thorough type of research: systematic experiments, including electronirradiation at low temperatures and recovery experiments on crystals of different doping and lattice defect concentration, combined with the simultaneous measurement of several physical parameters on the same sample, ie electrical conductivity, carrier concentration, thermoelectric power, Nernst-Ettingshausen effect, optical absorption or transmission measurement. This paper describes a multiple purpose cryostat which is designed for low-temperature electron irradiation and recovery experiments in the temperature range from 2-350 K, and which is suitable for simultaneous measurement of electrical resistance and magneto-resistance 8 (B) (up to 4T), Hall-effect R a and Seeb~ck-or magneto-Seebeck effect S(B) and Nernst-Ettingshausen effect Q. In addition spectroscopic investigations may be performed. This cryostat has been successfully used in conjunction with a 1 MeV van de Graft-accelerator for electron-irradiation, isochronal and isothermal annealing studies on tellurium.2