Multiple wavelength electroluminescence and laser generation in p-i-n resonant tunneling heterostructures

✍ Scribed by A.A. Toropov; T.V. Shubina; A.V. Lebedev; B. Ya. Mel'tser; S.V. Shaposhnikov; M.G. Tkatchman; P.S. Kop'ev; Y. Fu; S.M. Cao; M. Willander

• Publisher: Elsevier Science
• Year: 1998
• Tongue: English
• Weight: 69 KB
• Volume: 24
• Category: Article
• ISSN: 0749-6036
• DOI: 10.1006/spmi.1996.0226

✦ Synopsis

We report a design and electroluminescence (EL) investigation of a p-i-n resonant tunneling device based on an Al 0.4 Ga 0.6 As/GaAs graded-index waveguide heterostructure. The intrinsic region of the structure consists of a quantum well (QW) surrounded by multiple barrier energy filters providing simultaneous resonant occupation of electron and heavy-hole second excited subbands in the QW. Several peaks are observed in the EL spectra, confirming occupation of the excited subbands. The EL efficiency displays a resonant behavior accompanied by an S-shaped negative differential resistance region in the voltage-current characteristic. Current bistability is demonstrated, leading to bistability in the EL and laser generation spectra.