Run-to-run control of a plasma etch process for 8 inch diameter silicon wafers at Digital Semiconductor is determined by maintenance of targeted values of post-etch metrology variables. The post-etch quality variables are extremely sensitive to variation in the etch chamber conditions due to fluctua
Multiple neural networks modeling techniques in process control: a review
✍ Scribed by Zainal Ahmad; Rabiatul ′Adawiah Mat Noor; Jie Zhang
- Publisher
- Wiley (John Wiley & Sons)
- Year
- 2009
- Tongue
- English
- Weight
- 257 KB
- Volume
- 4
- Category
- Article
- ISSN
- 1932-2135
- DOI
- 10.1002/apj.213
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