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Multiple confined-state transitions within surface quantum dots by a piezomodulation reflectance study

✍ Scribed by Yu, C. H. ;Wang, C. ;Zhang, B. ;Gong, Q. ;Li, Y. J. ;Lu, W. ;Shen, S. C.


Book ID
105363895
Publisher
John Wiley and Sons
Year
2007
Tongue
English
Weight
222 KB
Volume
204
Category
Article
ISSN
0031-8965

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✦ Synopsis


Abstract

Multiple confined‐state transitions within surface quantum dots deposited on In~0.35~Ga~0.65~As template grown on GaAs (311)B substrate, as well as signals from all other relevant portions of the samples including buried QDs, In~0.35~Ga~0.65~As template, and GaAs‐related layers, at 77 K, were obtained in a piezomodulation reflectance spectroscopy (PzR) study. The measured transition energies were accurately determined using a Gaussian lineshape fit based on the reference of PL results. Four factors caused the large energy shift (larger than 400 meV) of confined states within SQDs compared to the buried QDs. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)


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Optical properties of InAs/In0.15Ga0.85A
✍ C. Wang; Y. Yang; X.M. Chen; C.S. Xia; Z.L. Liu; H.Y. Cui; W. Lu 📂 Article 📅 2008 🏛 Elsevier Science 🌐 English ⚖ 756 KB

Piezomodulated reflectance (PzR) spectroscopy has been used to study the InAs/In 0.15 Ga 0.85 As quantum dots-in-a-well (DWELL) samples in the temperature range of 70-300 K. The optical transitions from ground state to excited states in InAs DWELL were observed. The heavy-and light-hole transitions