Electron transport in mesoscopic GaAs/Al
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K.-M.H. Lenssen; L.A. Westerling; P.C.A. Jeekel; C.J.P.M. Harmans; J.E. Mooij; M
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Article
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1994
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Elsevier Science
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English
⚖ 158 KB
For the first time an enhancement of weak localization by Andreev-reflection has been measured. This means that the interface between the Sn/Ti contacts and the two-dimensional electron gas (2DEG) in the GaAs/AIGaAsheterostructure is practically barrier-free. The effect can be depressed by increased