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Multi-junction solar cells and novel structures for solar cell applications

✍ Scribed by Masafumi Yamaguchi


Publisher
Elsevier Science
Year
2002
Tongue
English
Weight
284 KB
Volume
14
Category
Article
ISSN
1386-9477

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✦ Synopsis


The present status of R& D program for super-high e ciency III-V compound multi-junction solar cells in the New Sunshine Project in Japan is presented. As a result of InGaP top cell material quality improvement, development of optically and electrically low-loss double-heterostructure InGaP tunnel junction, photon and carrier conΓΏnements, and lattice matching between active cell layers and substrate, InGaP=InGaAs=Ge monolithic cascade 3-junction cells with an e ciency of 31.7% at 1-sun AM1.5 and InGaP=GaAs==InGaAs mechanically stacked 3-junction cells with the highest (world-record) e ciency of 33.3% at 1-sun AM1.5 have been realized. As an approach for low-cost and high-e ciency cells, better radiation resistance of GaAs thin-ΓΏlm solar cells with novel structures fabricated on Si substrates has also been demonstrated. Novel structures such as Bragg re ector and super-lattice structures are found to show a better initial cell performance and radiation resistance since those layers act as bu er layers to reduce dislocations, and act as a back-surface ΓΏeld and back-surface re ector layers.


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