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MRAM Device Incorporating Single-Layer Switching via Rashba-Induced Spin Torque

✍ Scribed by Jie Guo; Seng Ghee Tan; Jalil, M.B.A.; Eason, K.; Lua, S.Y.H.; Rachid, S.; Hao Meng


Book ID
114655055
Publisher
IEEE
Year
2011
Tongue
English
Weight
674 KB
Volume
47
Category
Article
ISSN
0018-9464

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