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MOVPE InN on a 3c-SiC/Si(111) template formed by C+-ion implantation into Si(111)

✍ Scribed by A. Yamamoto; T. Kobayashi; T. Yamauchi; M. Sasase; A. Hashimoto; Y. Ito

Publisher
John Wiley and Sons
Year
2005
Tongue
English
Weight
81 KB
Volume
2
Category
Article
ISSN
1862-6351

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## Abstract This paper reports the MOVPE growth of InN on a 3c‐SiC/Si template formed by C^+^‐ion implantation into Si(111). Properties of grown films on the template are compared with those grown on sapphire in the same run. By employing the nitridation process of the template at 900 Β°C for 30 min