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MOVPE growth of GaAsN: surface study by AFM and optical properties

✍ Scribed by L. Auvray; H. Dumont; J. Dazord; Y. Monteil; J. Bouix; C. Bru-Chevallier; L. Grenouillet

Book ID
104420451
Publisher
Elsevier Science
Year
2000
Tongue
English
Weight
222 KB
Volume
3
Category
Article
ISSN
1369-8001

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## Abstract We have successfully grown high‐N‐content GaAsN films up to 5.1% on GaAs(001) substrates using tertiarybutylarsine (TBAs) as the As precursor by metalorganic vapour phase epitaxy (MOVPE). The narrow X‐ray diffraction (XRD) peaks and clear Pendellosung fringes indicate that the GaAsN/GaA