𝔖 Bobbio Scriptorium
✦   LIBER   ✦

MOVPE growth of cubic GaN on GaAs using dimethylhydrazine

✍ Scribed by S. Miyoshi; K. Onabe; N. Ohkouchi; H. Yaguchi; R. Ito; S. Fukatsu; Y. Shiraki

Book ID
103167510
Publisher
Elsevier Science
Year
1992
Tongue
English
Weight
325 KB
Volume
124
Category
Article
ISSN
0022-0248

No coin nor oath required. For personal study only.

πŸ“œ SIMILAR VOLUMES

Structural Defects of Cubic InGaN/GaN He
Structural Defects of Cubic InGaN/GaN Heterostructure Grown on GaAs(001) Substrate by MOVPE
✍ Taniyasu, Y. ;Watanabe, Y. ;Lim, D. H. ;Jia, A. W. ;Shimotomai, M. ;Kato, Y. ;Ko πŸ“‚ Article πŸ“… 1999 πŸ› John Wiley and Sons 🌐 English βš– 161 KB πŸ‘ 2 views

Structural Defects of Cubic InGaN/GaN Heterostructure Grown on GaAs(001) Substrate by MOVPE Y. Taniyasu 1 ) (a), Y. Watanabe (a), D. H. Lim (a), A. W. Jia (a), M. Shimotomai (a), Y. Kato (a), M. Kobayashi (a), A. Yoshikawa (a), and K. Takahashi (b)

MOCVD Growth of InNxAs1β€”x on GaAs Using
MOCVD Growth of InNxAs1β€”x on GaAs Using Dimethylhydrazine
✍ A.A. El-Emawy; H.-J. Cao; E. Zhmayev; J.-H. Lee; D. Zubia; M. OsiΕ„ski πŸ“‚ Article πŸ“… 2001 πŸ› John Wiley and Sons 🌐 English βš– 119 KB πŸ‘ 1 views

InNAs/GaAs multiple-quantum-well samples were grown by MOCVD on (100) n + -GaAs substrates at 500 ΒΊC and 60 Torr using uncracked dimethylhydrazine (DMHy). Quantum well layers were grown using trimethylindium, tertiarybutylarsine, and 95-97.5% of DMHy in the vapor phase, while GaAs buffer, barrier, a