𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Mott Insulators Induced by Carrier Doping

✍ Scribed by Watanabe, Hiroshi; Shirakawa, Tomonori; Yunoki, Seiji

Book ID
120373422
Publisher
The American Physical Society
Year
2013
Tongue
English
Weight
307 KB
Volume
110
Category
Article
ISSN
0031-9007

No coin nor oath required. For personal study only.

πŸ“œ SIMILAR VOLUMES

Pressure induced metallization of Mott i
Pressure induced metallization of Mott insulators; The Mott transition
✍ Moshe P. Pasternak; R. Dean Taylor πŸ“‚ Article πŸ“… 1993 πŸ› Elsevier Science 🌐 English βš– 260 KB

High pressure studies using Diamond Anvil Cells were carried out in antiferromagnetic insulator transition metal iodides characterized by their layered structure. Magnetic properties studied by 129I M~ssbauer Spectroscopy, the equation of state obtained from X-ray diffraction and metal insulator tra

Charge dynamics in doped Mott insulators
Charge dynamics in doped Mott insulators
✍ Masanori Kohno; Xiao Hu; Masashi Tachiki πŸ“‚ Article πŸ“… 2004 πŸ› Elsevier Science 🌐 English βš– 413 KB

Charge dynamics in the two-dimensional Hubbard model is investigated by quantum Monte Carlo simulations. We find that dielectric function ðq; xÞ becomes negative at finite frequencies for U =t ¼ 4 with hole density d ¼ 0:15. Numerical results indicate that vertex corrections enhance charge fluctuati