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MOSFET drain current reduction under Fowler–Nordheim and channel hot carrier injection before gate oxide breakdown

✍ Scribed by Simone Gerardin; Andrea Cester; Alessandro Paccagnella; Gabriella Ghidini


Book ID
104064215
Publisher
Elsevier Science
Year
2004
Tongue
English
Weight
241 KB
Volume
7
Category
Article
ISSN
1369-8001

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