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Mosfet devices with trapezoidal gates: I–V characteristics and magnetic sensitivity

✍ Scribed by G.R. Mohan Rao; W.N. Carr

Publisher
Elsevier Science
Year
1973
Tongue
English
Weight
549 KB
Volume
16
Category
Article
ISSN
0038-1101

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Improved electrical characteristics and reliability of Ge MOSFET device with nitrided high-k gate dielectric by plasma immersion ion implantation
✍ Chung-Hao Fu; Kuei-Shu Chang-Liao; Wei-Hao Tseng; Chun-Chang Lu; Tien-Ko Wang; W 📂 Article 📅 2011 🏛 Elsevier Science 🌐 English ⚖ 770 KB

MOSFET devices with Ge channel and nitridation treatment using plasma immersion ion implantation (PIII) are studied in this work. Experimental results show that the electrical characteristics and reliability of Ge MOSFETs can be significantly improved by PIII nitridation. For instance, the mobility