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MOS interface-state density measurements using transient capacitance spectroscopy

✍ Scribed by Wang, K.L.


Book ID
114593654
Publisher
IEEE
Year
1980
Tongue
English
Weight
910 KB
Volume
27
Category
Article
ISSN
0018-9383

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A novel electrical evaluation method was proposed for crystal quality characterization of thin Si on insulator (SOI) wafers, which was done by measurement of minority carrier generation lifetime (t g ) using transient capacitance method for lateral metal-oxidesemiconductor (MOS) capacitor. The later