✦ LIBER ✦
MOS and vertical junction device characteristics of epitaxial silicon on low aluminum-rich spinel : K. H. Zaininger and C. C. Wang, Solid-St. Electron.13 (1970), p. 943
- Publisher
- Elsevier Science
- Year
- 1971
- Tongue
- English
- Weight
- 112 KB
- Volume
- 10
- Category
- Article
- ISSN
- 0026-2714
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