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Morphology Optimization for the Fabrication of High Mobility Thin-Film Transistors

✍ Scribed by Xiangnan Sun; Lei Zhang; Chong-an Di; Yugeng Wen; Yunlong Guo; Yan Zhao; Gui Yu; Yunqi Liu

Publisher: John Wiley and Sons
Year: 2011
Tongue: English
Weight: 881 KB
Volume: 23
Category: Article
ISSN: 0935-9648
DOI: 10.1002/adma.201101178

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W and L are, respectively, the semiconductor channel width and length, C i is the capacitance per unit area of the gate dielectric layer, and V G and V T are, respectively, the gate voltage and threshold voltage. V T of the device was determined from the relationship between the square root of I SD