✦ LIBER ✦

Morphology of Thick SiC Epitaxial Films Grown by the Physical Vapor Transport Method

✍ Scribed by B.P. Wagner; N.B. Singh; A. Berghmans; D.J. Knuteson; D. Kahler; S. McLaughlin; J. Hawkins; J. Golombeck

Book ID: 107455097
Publisher: Springer US
Year: 2008
Tongue: English
Weight: 465 KB
Volume: 37
Category: Article
ISSN: 0361-5235
DOI: 10.1007/s11664-007-0364-5

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Electrical characterization of 6H-SiC gr

Electrical characterization of 6H-SiC grown by physical vapor transport method

✍ G. Zaremba; M. Kaniewska; W. Jung; M. Guziewicz; K. Grasza 📂 Article 📅 2009 🏛 Elsevier Science 🌐 English ⚖ 488 KB

Thermoelastic stresses in SiC single cry

Thermoelastic stresses in SiC single crystals grown by the physical vapor transport method

✍ Zibing Zhang; Jing Lu; Qisheng Chen; V. Prasad 📂 Article 📅 2006 🏛 The Chinese Society of Theoretical and Applied Mec 🌐 English ⚖ 447 KB

Superconductivity of epitaxial MgB2 thic

Superconductivity of epitaxial MgB2 thick films and MgB2 nanowires grown by hybrid physical–chemical vapor deposition

✍ W.K. Seong; W.N. Kang 📂 Article 📅 2008 🏛 Elsevier Science 🌐 English ⚖ 543 KB

Photoluminescence of epitaxial GaAs grow

Photoluminescence of epitaxial GaAs grown by close space vapor transport method

✍ J.Mimila Arroyo; L. Kratena; F. Chávez; F. de Anda 📂 Article 📅 1984 🏛 Elsevier Science 🌐 English ⚖ 234 KB

Morphological characterization of pentac

Morphological characterization of pentacene single crystals grown by physical vapor transport

✍ Xionghui Zeng; Yong Qiu; Juan Qiao; Guifang Dong; Liduo Wang 📂 Article 📅 2007 🏛 Elsevier Science 🌐 English ⚖ 625 KB

Thermoelectric properties of SiC thick f

Thermoelectric properties of SiC thick films deposited by thermal plasma physical vapor deposition

✍ X.H Wang; A Yamamoto; K Eguchi; H Obara; T Yoshida 📂 Article 📅 2003 🏛 Institute of Physics and National Institute of Mat 🌐 English ⚖ 348 KB

SiC thick films of about 300 mm could be prepared with a deposition rate above 300 nm/s by thermal plasma physical vapor deposition (TPPVD) using ultrafine SiC powder as a starting material. The thermoelectric properties were investigated as a function of composition and doping content. The nondoped