The polynuclear growth mechanism of crystals is studied by means of a moditkd Monte Carlo simulation teehnique. An attempt is made to bring the simulation model to correspond to the growth conditions of the polynuelear mechanism as required by theory. A representative transient of the growth rate is
Monte Carlo simulation of polynuclear growth mechanism with nucleation on active sites
β Scribed by W. Obretenov
- Book ID
- 107749652
- Publisher
- Elsevier Science
- Year
- 1988
- Tongue
- English
- Weight
- 440 KB
- Volume
- 33
- Category
- Article
- ISSN
- 0013-4686
No coin nor oath required. For personal study only.
π SIMILAR VOLUMES
## Abstract We present a complete simulation scheme for particulate processes based on the constant number Monte Carlo methodology. Specifically, the proposed scheme can be applied towards the solution of population balances that include nucleation, coagulation and surface deposition, coupled to ch
The thin-film growth process on a triangular lattice surface is studied by a Monte Carlo simulation (MCS). Four kinetic processes are considered: atom deposition, adatom diffusion, adatom nucleation and adatom reevaporation. We pay close attention to the substrate temperature and the interaction bet