โ Scribed by U. Ravaioli; C.H. Lee; M.B. Patil
No coin nor oath required. For personal study only.
Monte Carlo techniques provide a stochastic solution of the Boltzmann Transport Equation (BTE). While the main disadvantages of the approach are the computational cost and the presence of statistical noise, Monte Carlo methods are much more mature than direct numerical approaches for the BTE and allow the inclusion of detailed bandstructure models for the semiconductor. The use of full Monte Carlo simulations is necessary when the goal is to understand the physical details of the transport, especially when hot electron effects are dominant. Heterojunctions are easily included and some quantum effects can also be incorporated. We review here the stateof-the-art of large scale Monte Carlo device simulations, focusing on aspects which are relevant for microwave applications. Examples will cover transient and steady-state simulations of important microwave devices. Issues relevant for the coupling of Monte Carlo simulation to field equations will be discussed.
๐ SIMILAR VOLUMES
This paper discusses advanced needs of Monte Carlo simulation approaches for MOS silicon devices scaled below 0.1 ยตm channel length. For predictive simulation over a wide range of biases, it is necessary to provide the Monte Carlo procedure with tuning capabilities to adjust the mobility through cal