𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Monte Carlo Modelling of Structure and Porosity of Co-Deposited Layers

✍ Scribed by P. N. Maya; S. P. Deshpande; M. Warrier


Publisher
John Wiley and Sons
Year
2006
Tongue
English
Weight
166 KB
Volume
46
Category
Article
ISSN
0005-8025

No coin nor oath required. For personal study only.

✦ Synopsis


A 3-dimensional Monte Carlo model for growth of hydrocarbon films on surfaces having dangling bonds is presented. The model is microscopic in the sense that it incorporates the stereoscopic orientations of the deposited hydrocarbons and macroscopic in that it considers shadowing effects and porosity. The parameters like surface roughness, porosity, H/C ratio and sp 2 /sp 3 ratio are related to (a) steric repulsion, (b) probability for hydrogen abstraction, (c) sp 2 /sp 3 configuration preference and (d) radical site densities. It is seen that the steric repulsion between the co-deposited molecules is an important parameter in deciding the micro-porosity and surface roughness of the films. The surface roughness of the grown films appears to show a consistent scaling exponent when compared to the well known ballistic model for nonlinear evolution of interfaces. Initial results on porosity and structure of the grown films for square samples ranging from 7-56 Γ… linear dimensions with periodic boundary conditions are presented.


πŸ“œ SIMILAR VOLUMES


Monte carlo study of a simple model for
✍ Steven W. Haan; Lawrence R. Pratt πŸ“‚ Article πŸ“… 1981 πŸ› Elsevier Science 🌐 English βš– 453 KB

A smple lattice model for a mxelJe IS formulated and studied by hlonte Carlo numerical methods. Results are presented for awegates of 20,30, and 50 cham molecules The density profiles are much broader than IS usually assumed in conventlonal pictures of nucelle structure and the average shapr found t

Monte Carlo modelling of abrupt InP/InGa
✍ Pau Garcias-SalvΓ‘; Juan M. LΓ³pez-GonzΓ‘lez; Lluis Prat πŸ“‚ Article πŸ“… 2003 πŸ› John Wiley and Sons 🌐 English βš– 247 KB

In this paper a Monte Carlo simulator which is focused on the modelling of abrupt heterojunction bipolar transistors (HBTs) is described. In addition, simulation results of an abrupt InP/InGaAs HBT are analysed in order to describe the behaviour of this kind of device, and are compared with experime