Monte Carlo calculation of energy loss of hydrogen and helium ions transmitted under channelling conditions in silicon single crystal

✍ Scribed by O. El Bounagui; H. Erramli

• Publisher: Elsevier Science
• Year: 2010
• Tongue: English
• Weight: 301 KB
• Volume: 268
• Category: Article
• ISSN: 0168-583X
• DOI: 10.1016/j.nimb.2010.01.010

✦ Synopsis

In this work, we report on calculations of the electronic channelling energy loss of hydrogen and helium ions along Sih1 0 0i and Sih1 1 0i axial directions for the low energy range by using the Monte Carlo simulation code. Simulated and experimental data are compared for protons and He ions in the h1 0 0i and h1 1 0i axis of silicon. A reasonable agreement was found.

Computer simulation was also employed to study the angular dependence of energy loss for 0.5, 0.8, 1, and 2 MeV channelled 4 He ions transmitted through a silicon crystal of 3 lm thickness along the h1 0 0i axis.