𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Monolithically Integrated Enhancement/Depletion-Mode AlGaN/GaN HEMT Inverters and Ring Oscillators Using Plasma Treatment

✍ Scribed by Yong Cai; Zhiqun Cheng; Tang, W.C.W.; Lau, K.M.; Chen, K.J.

Book ID
114618141
Publisher
IEEE
Year
2006
Tongue
English
Weight
466 KB
Volume
53
Category
Article
ISSN
0018-9383

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Integration of enhancement and depletion
Integration of enhancement and depletion-mode AlGaN/GaN MIS-HFETs by fluoride-based plasma treatment
✍ Wang, Ruonan ;Cai, Yong ;Tang, Wilson C. W. ;Lau, Kei May ;Chen, Kevin J. 📂 Article 📅 2007 🏛 John Wiley and Sons 🌐 English ⚖ 310 KB

## Abstract Enhancement‐mode AlGaN/GaN metal–insulator–semiconductor HFETs (MIS‐HFETs) are demonstrated by combining CF~4~ plasma treatment technique and a two‐step Si~3~N~4~ deposition process. The threshold voltage has been shifted from –4 to 2 V using this technique. A 15 nm Si~3~N~4~ layer is i