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Monolithic VCSEL with InGaAsN active region emitting at 1.28 [micro sign]m and CW output power exceeding 500 [micro sign]W at room temperature

✍ Scribed by Steinle, G.; Riechert, H.; Egorov, A.Yu.


Book ID
119999422
Publisher
The Institution of Electrical Engineers
Year
2001
Tongue
English
Weight
398 KB
Volume
37
Category
Article
ISSN
0013-5194

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