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Monolithic integration of nitride-based transistor with Light Emitting Diode for sensing applications

✍ Scribed by F.G. Kalaitzakis; E. Iliopoulos; G. Konstantinidis; N.T. Pelekanos


Book ID
113797826
Publisher
Elsevier Science
Year
2012
Tongue
English
Weight
493 KB
Volume
90
Category
Article
ISSN
0167-9317

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## Abstract A Si/III–V–N alloys/Si structure was grown on a Si substrate by solid‐source molecular beam epitaxy (SSMBE) with an rf plasma nitrogen source and electron‐beam (EB) evaporator. A two‐dimensional (2D) growth mode was maintained during the growth of all layers. High‐resolution X‐ray diffr