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Monolithic Integration of Enhancement- and Depletion-Mode AlN/GaN/AlGaN DHFETs by Selective MBE Regrowth

✍ Scribed by Brown, D.F.; Shinohara, K.; Williams, A.; Milosavljevic, I.; Grabar, R.; Hashimoto, P.; Willadsen, P.J.; Schmitz, A.; Corrion, A.L.; Kim, S.; Regan, D.; Butler, C.M.; Burnham, S.D.; Micovic, M.

Book ID
114620369
Publisher
IEEE
Year
2011
Tongue
English
Weight
786 KB
Volume
58
Category
Article
ISSN
0018-9383

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## Abstract Enhancement‐mode AlGaN/GaN metal–insulator–semiconductor HFETs (MIS‐HFETs) are demonstrated by combining CF~4~ plasma treatment technique and a two‐step Si~3~N~4~ deposition process. The threshold voltage has been shifted from –4 to 2 V using this technique. A 15 nm Si~3~N~4~ layer is i