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Monolithic integrated circuits incorporating InP-based heterostructure barrier varactors

โœ Scribed by David, T.; Arscott, S.; Munier, J.-M.; Akalin, T.; Mounaix, P.; Beaudin, G.; Lippens, D.


Book ID
118165485
Publisher
IEEE
Year
2002
Tongue
English
Weight
200 KB
Volume
12
Category
Article
ISSN
1531-1309

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## Abstract The heterostructure barrier varactor design method aims at finding optimum epitaxial layer structure and device geometry to improve the diode power handling capability. The nonlinear thermal resistance of the HBV and an empirical expression introducing the leakage current are proposed a