## Abstract About 20 ฮผm thick films were deposited in the same run by MPCVD at 900 ยฐC on Si substrates and then hydrogenated in situ during 30 min with a hydrogen plasma at the same temperature. Their surfaces were kept as prepared or more or less strongly oxidized by annealing at 600 ยฐC under ambi
โฆ LIBER โฆ
Monitoring the quality of diamond films using Raman spectra excited at 514.5 nm and 633 nm
โ Scribed by Sails, Stephanie R.; Gardiner, Derek J.; Bowden, Michael; Savage, James; Rodway, Don
- Book ID
- 120651721
- Publisher
- Elsevier Science
- Year
- 1996
- Tongue
- English
- Weight
- 331 KB
- Volume
- 5
- Category
- Article
- ISSN
- 0925-9635
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