MOMD96 — Mid-IR optoelectronics materials and devices
- Publisher
- Elsevier Science
- Year
- 1996
- Tongue
- English
- Weight
- 173 KB
- Volume
- 9
- Category
- Article
- ISSN
- 0961-1290
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## Abstract Recent progress in chromium and iron doped II‐VI semiconductor materials makes them the laser sources of choice when one needs a compact system with tunability over 1.9–5.1 μm. Output powers exceeding 10 W and efficiency up to 70% were demonstrated in several Cr doped semiconductors. Th
Epitaxial IV-VI narrow band gap semiconductors on Si(1 1 1) substrates exhibit high structural quality despite the large lattice and thermal expansion mismatch. Test arrays with photovoltaic n + -p PbTe infrared sensors (cut-o wavelength 5:5 m at 80 K) of di erent sizes were fabricated and analyzed.
## Abstract Compounds (IV) and (VI) are characterized by single crystal XRD, UV/VIS/NIR diffuse reflectance spectroscopy, second harmonic generation and piezoelectric measurements, and DFT calculations.