Molecular simulation: a microscopic approach to study the growth of native silicon oxide

✍ Scribed by V.V. Pham; R. Razafindratsita; J.J. Simonne

• Publisher: Elsevier Science
• Year: 1993
• Tongue: English
• Weight: 267 KB
• Volume: 17
• Category: Article
• ISSN: 0921-5107
• DOI: 10.1016/0921-5107(93)90102-s

✦ Synopsis

An atomic scale model is used to study the dynamics of oxide growth on an Si substrate with and without point defects. The results obtained on an ideal Si substrate have been reported already and have been shown to be consistent with experimental data. This paper analyses the Si point defects behaviour and their effect on the thickness and the "roughness" of the oxide atomic layers during Si oxidation.