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Molecular model of impurity bands in semiconductors. II. the validity of the one-bandAMO-MT model

✍ Scribed by K. A. Chao; A. Ferreira Da Silva


Publisher
John Wiley and Sons
Year
2009
Tongue
English
Weight
356 KB
Volume
14
Category
Article
ISSN
0020-7608

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## Abstract The electronic properties are discussed of hydrogen impurities in aluminium resulting from a realistic bandstructure description of the pure metal. A Green's function matrix technique is used to solve the anisotropic impurity interaction to self‐consistency. The results show that the ac