## Abstract We report on the characteristics of our recent room temperature continuousβwave InGaN quantum well laser diodes grown by by molecular beam epitaxy (MBE). Uncoated ridge waveguide lasers fabricated on freestanding GaN substrates have a continuousβwave (cw) threshold current of 110 mA, co
Molecular Beam Epitaxy || MBE of dilute-nitride optoelectronic devices
β Scribed by Guina, Mircea
- Book ID
- 118022827
- Publisher
- Elsevier
- Year
- 2013
- Tongue
- English
- Weight
- 968 KB
- Edition
- 1
- Category
- Article
- ISBN
- 012387839X
No coin nor oath required. For personal study only.
β¦ Synopsis
This multi-contributor handbook discusses Molecular Beam Epitaxy (MBE), an epitaxial deposition technique which involves laying down layers of materials with atomic thicknesses on to substrates. It summarizes MBE research and application in epitaxial growth with close discussion and a βhow toβ on processing molecular or atomic beams that occur on a surface of a heated crystalline substrate in a vacuum.
MBE has expanded in importance over the past thirty years (in terms of unique authors, papers and conferences) from a pure research domain into commercial applications (prototype device structures and more at the advanced research stage). MBE is important because it enables new device phenomena and facilitates the production of multiple layered structures with extremely fine dimensional and compositional control. The techniques can be deployed wherever precise thin-film devices with enhanced and unique properties for computing, optics or photonics are required. This book covers the advances made by MBE both in research and mass production of electronic and optoelectronic devices. It includes new semiconductor materials, new device structures which are commercially available, and many more which are at the advanced research stage.
- Condenses fundamental science of MBE into a modern reference, speeding up literature review
- Discusses new materials, novel applications and new device structures, groundingΒ current commercial applications with modern understanding in industry and research
- Coverage of MBE as mass production epitaxial technology enhances processing efficiency and throughput for semiconductor industry and nanostructured semiconductor materials research community
π SIMILAR VOLUMES
Having celebrated its twenty-second anniversary, molecular beam epitaxy (MBE) has reached a very mature state as a crystallographic growth technique for a variety of semiconductor materials. It is widely used at universities, for industrial research in development laboratories and in production. Com
This multi-contributor handbook discusses Molecular Beam Epitaxy (MBE), an epitaxial deposition technique which involves laying down layers of materials with atomic thicknesses on to substrates. It summarizes MBE research and application in epitaxial growth with close discussion and a βhow toβ on pr