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Molecular beam epitaxial growth of high quality HgTe and Hg1-xCdxTe onto GaAs(001) substrates

✍ Scribed by Faurie, J. P.; Sivananthan, S.; Boukerche, M.; Reno, J.

Book ID
111954853
Publisher
American Institute of Physics
Year
1984
Tongue
English
Weight
500 KB
Volume
45
Category
Article
ISSN
0003-6951

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Growth of high quality of ZnSe epilayers
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We have investigated the structural properties of ZnSe epilayers that were grown by molecular beam epitaxy on (001) GaAs substrate with different tilt angles. Two-dimensional growth mode increased with increasing tilt of (001) GaAs toward [010] direction. This was confirmed by atomic force microscop