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Molecular beam epitaxial growth of a GaAs layer free from antiphase domains on an exactly (100)-oriented Si substrate preheated at 1000°C

✍ Scribed by H. Noge; H. Kano; T. Kato; M. Hashimoto; I. Igarashi


Publisher
Elsevier Science
Year
1987
Tongue
English
Weight
889 KB
Volume
83
Category
Article
ISSN
0022-0248

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