Modified strong-inversion potential for accurate modelling of long-channel MOS transistors

✍ Scribed by Stenberg, L.J.

• Book ID: 114454058
• Publisher: The Institution of Electrical Engineers
• Year: 1983
• Weight: 410 KB
• Volume: 130
• Category: Article
• ISSN: 0143-7100
• DOI: 10.1049/ip-i-1.1983.0013