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Modification of the electronic structure and formation of an accumulation layer in ultrathin Ba/n-GaN and Ba/n-AlGaN interfaces

✍ Scribed by Benemanskaya, G. V.; Timoshnev, S. N.; Ivanov, S. V.; Frank-Kamenetskaya, G. E.; Marchenko, D. E.; Iluridze, G. N.

No coin nor oath required. For personal study only.

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