## Ž . The Tir6H-SiC 0001 interface with the Schottky limit and the SiC surfaces before metallization are investigated using Ž . Ž . Ž . low energy electron microscopy LEED , Auger electron spectroscopy AES , X-ray photoemission spectroscopy XPS , Ž . Ž . scanning tunneling microscopy STM , and cr
✦ LIBER ✦
Modification of 4H-SiC and 6H-SiC(0001)Sisurfaces through the interaction with atomic hydrogen and nitrogen
✍ Scribed by Maria Losurdo; Maria M. Giangregorio; Pio Capezzuto; Giovanni Bruno; April S. Brown; Tong-Ho Kim; Changhyun Yi
- Book ID
- 107453419
- Publisher
- Springer US
- Year
- 2005
- Tongue
- English
- Weight
- 607 KB
- Volume
- 34
- Category
- Article
- ISSN
- 0361-5235
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