Models for the Si-SiO2 interface degradation at low injected electron fluences : A. Mir and D. Vuillaume. Microelectronics Journal, 24, 361 (1993)

• Publisher: Elsevier Science
• Year: 1994
• Tongue: English
• Weight: 111 KB
• Volume: 34
• Category: Article
• ISSN: 0026-2714
• DOI: 10.1016/0026-2714(94)90426-x