Modelling sidewall effects in downscaled bipolar transistors
β Scribed by G.A.M. Hurkx
- Publisher
- Elsevier Science
- Year
- 1989
- Tongue
- English
- Weight
- 976 KB
- Volume
- 32
- Category
- Article
- ISSN
- 0038-1101
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π SIMILAR VOLUMES
Self-heating effects in silicon-on-insulator (SOI) bipolar junction transistors (BJT) have been investigated by measurements and electrothermal simulations. The low heat conductivity of the buried silicon dioxide in the SOI material is shown to increase the thermal resistance, leading to thermal run
An improved non-linear high-frequency model for the bipolar transistor is presented, based on considerations of the dynamics of the charge stored in the base region. The model incorporates higher-order circuit elements in order to obtain increased accuracy in circuit simulation at high frequencies.