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Modelling of Radiation Response of p-Channel SiC MOSFETs

โœ Scribed by Lee, Kin Kiong; Ohshima, Takeshi; Itoh, Hisayoshi


Book ID
121081480
Publisher
Trans Tech Publications, Ltd.
Year
2003
Tongue
English
Weight
582 KB
Volume
433-436
Category
Article
ISSN
1662-9752

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Analytical model of 6H-SiC MOSFET
โœ Anil Kumar; Navneet Kaushik; Subhasis Haldar; Mridula Gupta; R.S. Gupta ๐Ÿ“‚ Article ๐Ÿ“… 2003 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 272 KB

An analytical model of 6H-SiC inversion channel MOSFET is developed incorporating the influence of incomplete dopant ionization. The charge sheet approach is used to evaluate the drain current, transconductance and drain conductance. Maximun transconductance of 46 mS is obtained for V 550 mV at a ga