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Modelling of d.c. characteristics of heterojunction bipolar transistor processed with MBE or MOCVD techniques

✍ Scribed by J. Dangla; E. Caquot; C. Dubon; M. Campana; R. Azoulay; F. Alexandre; J. Lievin; J.F. Palmier; D. Ankri


Publisher
Elsevier Science
Year
1985
Weight
265 KB
Volume
129
Category
Article
ISSN
0378-4363

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