Modelling of a new high current gain bipolar transistor with n-doped hydrogenated silicon emitter

✍ Scribed by Bonnaud, O.; Viktorovitch, P.

• Book ID: 114454140
• Publisher: The Institution of Electrical Engineers
• Year: 1985
• Weight: 880 KB
• Volume: 132
• Category: Article
• ISSN: 0143-7100
• DOI: 10.1049/ip-i-1.1985.0005