✦ LIBER ✦

Modelling and simulation of saturation region in double gate graphene nanoribbon transistors

✍ Scribed by Mahdiar H. Ghadiry; Mahdieh Nadi; Meisam Rahmani; Mohamad Taghi Ahmadi; Asrulnizam Bin Abd Manaf

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

A model for length of saturation velocit

✍ M.H. Ghadiry; M. Nadi S.; M.T. Ahmadi; Asrulnizam Abd Manaf 📂 Article 📅 2011 🏛 Elsevier Science 🌐 English ⚖ 738 KB

Gate capacitance modeling and width-depe

✍ Kliros, George S. 📂 Article 📅 2013 🏛 Elsevier Science 🌐 English ⚖ 862 KB

Analytical modeling of uniaxial strain e

✍ Kliros, George S 📂 Article 📅 2014 🏛 Springer-Verlag 🌐 English ⚖ 467 KB

Modeling and simulation of uniaxial stra

✍ Kang, Jiahao; He, Yu; Zhang, Jinyu; Yu, Xinxin; Guan, Ximeng; Yu, Zhiping 📂 Article 📅 2010 🏛 American Institute of Physics 🌐 English ⚖ 448 KB

Numerical study on the performance metri

✍ Wang, Wei; Yang, Xiao; Li, Na; Zhang, Lu; Zhang, Ting; Yue, Gongshu 📂 Article 📅 2013 🏛 Elsevier Science 🌐 English ⚖ 340 KB

Modeling and parameter extraction of gat

✍ Yun-Shan Chang; Sheng S. Li 📂 Article 📅 1996 🏛 Elsevier Science 🌐 English ⚖ 721 KB