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Modelling a μc-Si:H p-i-n device under non-uniform illumination

✍ Scribed by A. Fantoni; M. Vieira; J. Cruz; R. Martins


Book ID
108389011
Publisher
Elsevier Science
Year
1997
Tongue
English
Weight
313 KB
Volume
296
Category
Article
ISSN
0040-6090

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The response of a p-i-n photodetector made from gallium arsenide to both steady-state and transient illumination has been modelled. Both an ensemble Monte-Carlo model and a drift-diffusion model were used, the latter with the choice of two different mobility models. The effects of high intensity ste