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Modeling the conduction characteristics of broken down gate oxides in MOS structures

✍ Scribed by E. Mirand; J. Suñé

Book ID
108361784
Publisher
Elsevier Science
Year
2000
Tongue
English
Weight
338 KB
Volume
40
Category
Article
ISSN
0026-2714

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In this work, the investigation of the interface states density and series resistance from capacitance-voltage (C-V) and conductance-voltage (G-V) characteristics in Au/SnO 2 /n-Si (MOS) structures prepared at various SnO 2 layer thicknesses by spray deposition technique have been reported. It is fa