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Modeling of the long-range interstitial migration of ion implanted boron

✍ Scribed by O.I. Velichko; N.V. Kniazhava


Book ID
116375583
Publisher
Elsevier Science
Year
2010
Tongue
English
Weight
195 KB
Volume
48
Category
Article
ISSN
0927-0256

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Effect of boron on formation of intersti
✍ McCallum, J. C. ;Villis, B. J. ;Johnson, B. C. ;Stavrias, N. ;Burgess, J. E. ;Ch 📂 Article 📅 2010 🏛 John Wiley and Sons 🌐 English ⚖ 310 KB

## Abstract The presence of boron in silicon has been shown to have a deleterious effect on the luminescence of interstitial‐related centres, particularly the W‐centre which is often observed after ion implantation and a low temperature anneal. Competition between silicon‐interstitial and boron‐int