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Modeling of the long-range interstitial migration of ion implanted boron

✍ Scribed by O.I. Velichko; N.V. Kniazhava

Book ID: 116375583
Publisher: Elsevier Science
Year: 2010
Tongue: English
Weight: 195 KB
Volume: 48
Category: Article
ISSN: 0927-0256
DOI: 10.1016/j.commatsci.2010.01.033

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## Abstract The presence of boron in silicon has been shown to have a deleterious effect on the luminescence of interstitial‐related centres, particularly the W‐centre which is often observed after ion implantation and a low temperature anneal. Competition between silicon‐interstitial and boron‐int